The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Apr. 27, 2011
Applicants:

Hirofumi Konishi, Chiyoda-ku, JP;

Hidetada Tokioka, Chiyoda-ku, JP;

Inventors:

Hirofumi Konishi, Chiyoda-ku, JP;

Hidetada Tokioka, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/05 (2014.01); H01L 31/046 (2014.01); H01L 31/056 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022466 (2013.01); H01L 31/022425 (2013.01); H01L 31/046 (2014.12); H01L 31/0504 (2013.01); H01L 31/056 (2014.12); Y02E 10/52 (2013.01);
Abstract

A photoelectric conversion device includes a front electrode, a photoelectric conversion layer formed of a semiconductor material, a transparent conductive layer formed of a transparent conductive oxide, a back electrode formed of a metal material, and a conductive layer formed of a semiconductor material primarily of silicon and having a refractive index higher than the transparent conductive layer contactually sandwiched between the transparent conductive layer and the back electrode. The photoelectric conversion device exhibits a high photoelectric conversion efficiency by keeping low the electrical resistance between the semiconductor layer and the back electrode and by increasing reflectance for light having passed though the semiconductor layer.


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