The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jun. 28, 2013
Mitsubishi Electric Corporation, Tokyo, JP;
Takeshi Kitani, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A silicon carbide semiconductor device of the present invention comprises a silicon carbide drift layer formed on a silicon carbide substrate, a P-type region formed in a surface layer of the silicon carbide drift layer, and a Schottky electrode formed above the silicon carbide drift layer correspondingly to a forming portion of the P-type region. The P-type region is formed of a plurality of unit cells arranged therein. Each of the unit cells has at least a first distribution region in which the P-type impurity is distributed at first concentration and a second distribution region in which the P-type impurity is distributed at second concentration higher than the first concentration. With this structure, it is possible to provide a silicon carbide semiconductor device in which a sufficient breakdown voltage can be achieved with less number of ion implantations.