The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jan. 23, 2014
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Young Bae Kim, Cheongju-si, KR;
In Taek Oh, Cheongju-si, KR;
Kyung Ho Lee, Cheongju-si, KR;
Kwang Il Kim, Cheongju-si, KR;
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 29/808 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/808 (2013.01); H01L 29/0692 (2013.01); H01L 29/404 (2013.01);
Abstract
A junction field-effect transistor (JFET) device is provided. The JFET includes a drain region, a source region, and a junction gate region disposed between the drain region and the source region, and the source region includes two or more source terminals.