The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Aug. 17, 2012
Kyoung-seok Son, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Hyun-suk Kim, Hwaseong-si, KR;
Joon-seok Park, Seongnam-si, KR;
Jong-baek Seon, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Kyoung-seok Son, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Hyun-suk Kim, Hwaseong-si, KR;
Joon-seok Park, Seongnam-si, KR;
Jong-baek Seon, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Samsung Display Co., Ltd., Gyeonggi-do, KR;
Abstract
A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.