The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Feb. 25, 2011
Takeyoshi Masuda, Osaka, JP;
Keiji Wada, Osaka, JP;
Satomi Itoh, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Takeyoshi Masuda, Osaka, JP;
Keiji Wada, Osaka, JP;
Satomi Itoh, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A method of manufacturing an SiC semiconductor device includes the steps of forming a first oxide film on a first surface of an SiC semiconductor, removing the first oxide film, and forming a second oxide film constituting the SiC semiconductor device on a second surface exposed as a result of removal of the first oxide film in the SiC semiconductor. Between the step of removing the first oxide film and the step of forming a second oxide film, the SiC semiconductor is arranged in an atmosphere cut off from an ambient atmosphere.