The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Mar. 31, 2014
Applicants:
Imec, Leuven, BE;
Katholieke Universiteit Leuven, K.u.leuven R&d, Leuven, BE;
Inventors:
Assignees:
IMEC, Leuven, BE;
Katholieke Universiteit Leuven, K.U.LEUVEN R&D, Leuven, BE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/24 (2006.01); H01L 29/775 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/775 (2013.01); H01L 21/0262 (2013.01); H01L 21/02527 (2013.01); H01L 29/1606 (2013.01); H01L 29/513 (2013.01); H01L 29/778 (2013.01); H01L 29/66015 (2013.01); H01L 2924/13088 (2013.01);
Abstract
A semiconductor device comprising a graphene layer, a graphene oxide layer overlaying the graphene layer, and a high-k dielectric layer overlaying the graphene oxide layer is provided, as well as a method for producing the same. The method results in a graphene chemical functionalization that efficiently and uniformly seeds ALD growth, preserves the underlying graphene structure, and achieves desirable dielectric properties such as low leakage current and high capacitance.