The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jan. 28, 2014
Applicant:
Delta Electronics, Inc., Taoyuan Hsien, TW;
Inventors:
Li-Fan Lin, Taoyuan Hsien, TW;
Hsuan-Wen Chen, Yaoyuan Hsien, TW;
Assignee:
DELTA ELECTRONCIS, INC., Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/2003 (2013.01); H01L 29/41758 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device includes a substrate and a plurality of transistors arranged on the substrate in an array. The transistor includes a first electrode, a plurality of second electrodes, and a gate electrode. The second electrodes are arranged around the first electrode. The gate electrode is located between the first electrode and the second electrodes. The first electrode is a circle or polygon. The gate electrode is around the first electrode, and an edge of the gate electrode facing the first electrode has a shape corresponding to that of the first electrode.