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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9184232 B1

PDFFull Text
Date of Patent:
Nov. 10, 2015

Filed:

Nov. 11, 2014

Semiconductor device and method of fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung-Hwan Kim, Seongnam-si, KR;

Hun-Hyeoung Leam, Yongin-si, KR;

Tae-Hyun Kim, Suwon-si, KR;

Seok-Woo Nam, Yongin-si, KR;

Hyun Namkoong, Anyang-si, KR;

Yong-Seok Kim, Seoul, KR;

Tea-Kwang Yu, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 21/28282 (2013.01); H01L 21/76232 (2013.01); H01L 21/823481 (2013.01); H01L 27/115 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/42352 (2013.01); H01L 29/66833 (2013.01); H01L 29/7854 (2013.01);
Abstract

A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

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