The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Feb. 26, 2015
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;

Inventors:

Jong-Hyun Choi, Yongin, KR;

Jae-Hwan Oh, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 51/05 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 27/3274 (2013.01); H01L 27/3276 (2013.01); H01L 29/41733 (2013.01); H01L 29/66765 (2013.01); H01L 51/0512 (2013.01); H01L 51/56 (2013.01); H01L 27/3248 (2013.01); H01L 51/0508 (2013.01); H01L 51/0541 (2013.01); H01L 2227/32 (2013.01); H01L 2227/323 (2013.01); H01L 2924/1307 (2013.01); H01L 2924/13069 (2013.01);
Abstract

An organic light-emitting display device including a TFT comprising an active layer, a gate electrode comprising a lower gate electrode and an upper gate electrode, and source and drain electrodes insulated from the gate electrode and contacting the active layer; an organic light-emitting device electrically connected to the TFT and comprising a pixel electrode formed in the same layer as where the lower gate electrode is formed; and a pad electrode electrically coupled to the TFT or the organic light emitting device and comprising a first pad electrode formed in the same layer as in which the lower gate electrode is formed, a second pad electrode formed in the same layer as in which the upper gate electrode is formed, and a third pad electrode comprising a transparent conductive oxide, the first, second, and third pad electrodes being sequentially stacked.


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