The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Dec. 21, 2012
Applicant:

Arizona Board of Regents, a Body Corporate of the State of Arizona, Acting for and on Behalf of Arizona State, Scottsdale, AZ (US);

Inventors:

Oray Orkun Cellek, Mountain View, CA (US);

Yong-Hang Zhang, Scottsdale, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/144 (2006.01); H01L 31/101 (2006.01); H01L 31/105 (2006.01); H01L 31/109 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14621 (2013.01); H01L 27/144 (2013.01); H01L 31/02019 (2013.01); H01L 31/105 (2013.01); H01L 31/109 (2013.01); H01L 31/1013 (2013.01);
Abstract

Multi-band photodetectors can be formed by series connecting unipolar and, optionally, bipolar semiconductor structures, each having different photodetection bands. Under default mode of operation, the detector with highest resistance and lowest current will be the current limiting device and will be the active photodetector. When the active photodetector is illuminated with strong light in its own detection band it will be optically biased. This active photodetector will no longer be the highest resistance device, and the next photodetector will be the active photodetector. Repeating this operation pattern, allows switching photodetection bands of the multi-band photodetector. The resistances, dark current and photocurrent of the devices should be engineered to have proper switching. Moreover, the illuminating surface, and photodetector placement should be optimized for proper light biasing. The current passing through the device will always be equal to the current of the active photodetector.


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