The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Dec. 09, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kyung-Tae Jang, Seoul, KR;
Myoung-Bum Lee, Seoul, KR;
Ji-Youn Seo, Gyeonggi-do, KR;
Chang-Won Lee, Gyeonggi-do, KR;
Yong-Chae Jung, Suwon-si, KR;
Woong-Hee Sohn, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor device includes a substrate, a plurality of insulating layers vertically stacked on the substrate, a plurality of channels arranged in vertical openings formed through at least some of the plurality of insulating layers, and a plurality of portions alternatingly positioned with the plurality of insulating layers in the vertical direction. At least some of the portions are adjacent corresponding channels of the plurality of channels. Each of the portions includes a conductive barrier pattern formed on an inner wall of the portion, a filling layer pattern positioned in the portion on the conductive barrier pattern, and a gate electrode positioned in a remaining area of the portion not occupied by the conductive barrier or filling layer pattern.