The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Dec. 12, 2014
Jung-geun Jee, Seoul, KR;
Seok-hoon Kim, Hwaseong-si, KR;
Su-jin Shin, Hwaseong-si, KR;
Woo-sung Lee, Yongin-si, KR;
Tae-ouk Kwon, Hwaseong-si, KR;
Jung-Geun Jee, Seoul, KR;
Seok-Hoon Kim, Hwaseong-si, KR;
Su-Jin Shin, Hwaseong-si, KR;
Woo-Sung Lee, Yongin-si, KR;
Tae-Ouk Kwon, Hwaseong-si, KR;
Abstract
A non-volatile memory device includes a field region that defines an active region in a semiconductor substrate, a floating gate pattern on the active region, a dielectric layer on the floating gate pattern and a control gate on the dielectric layer. The control gate includes a first conductive pattern that has a first composition that crystallizes in a first temperature range, and a second conductive pattern that has a second composition that is different from the first composition and that crystallizes in a second temperature range that is lower than the first temperature range, the first conductive pattern being between the dielectric layer and the second conductive pattern.