The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jul. 20, 2015
Texas Instruments Incorporated, Dallas, TX (US);
Pinghai Hao, Plano, TX (US);
Sameer Pendharkar, Allen, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An integrated circuit containing an analog MOS transistor has an implant mask for a well which blocks well dopants from two diluted regions at edges of the gate, but exposes a channel region to the well dopants. A thermal drive step diffuses the implanted well dopants across the two diluted regions to form a continuous well with lower doping densities in the two diluted regions. Source/drain regions are formed adjacent to and underlapping the gate by implanting source/drain dopants into the substrate adjacent to the gate using the gate as a blocking layer and subsequently annealing the substrate so that the implanted source/drain dopants provide a desired extent of underlap of the source/drain regions under the gate. Drain extension dopants and halo dopants are not implanted into the substrate adjacent to the gate.