The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Oct. 04, 2011
Applicants:

Kosar Baghbani-parizi, Los Altos, CA (US);

Yoshio Nishi, Los Altos, CA (US);

Hesaam Esfandyarpour, Los Altos, CA (US);

Inventors:

Kosar Baghbani-Parizi, Los Altos, CA (US);

Yoshio Nishi, Los Altos, CA (US);

Hesaam Esfandyarpour, Los Altos, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); B82Y 15/00 (2011.01); H01L 27/12 (2006.01); B01L 3/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); B82Y 15/00 (2013.01); G01N 27/4145 (2013.01); H01L 27/1203 (2013.01); B01L 3/502753 (2013.01);
Abstract

A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.


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