The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Nov. 14, 2014
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventor:
William T. Lee, Dublin, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/32 (2006.01); H01L 21/266 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/02282 (2013.01); H01L 21/0337 (2013.01);
Abstract
The embodiments herein relate to methods, apparatus, and systems for forming recessed features at high aspect ratios. Often, such features are formed in the context of fabricating a vertical NAND (VNAND) memory device. Various disclosed embodiments relate to process flows that involve depositing and shaping sacrificial posts on a metal seed layer that covers an underlying stack of materials, electroplating or electroless plating metal hard mask material around the sacrificial posts, removing the sacrificial posts, and etching the underlying stack of materials to form a high aspect ratio recessed feature.