The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Mar. 21, 2014
Applicant:

Inotera Memories, Inc., Taoyuan, TW;

Inventor:

Kuo-Yao Chou, Taichung, TW;

Assignee:

INOTERA MEMORIES, INC., Hwa-Ya Technology Park Kueishan, Taoyuan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31116 (2013.01);
Abstract

A method of fabricating a semiconductor device includes the steps of providing a hard mask cover using a patterned photoresist layer, wherein the patterned photoresist layer comprises at least four first holes arranged in two rows and two columns. Part of the hard mask is removed to form at least four second holes by taking the pattered photoresist layer as a mask. Next, each of the first holes is widened, and the widened first holes and the second holes are filled up by a filler. Later, the patterned photoresist layer is removed entirely. Part of the hard mask is removed to form at least a fourth hole by taking the filler as a mask. Finally, the filler is removed entirely.


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