The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jul. 24, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Xianyu Wenxu, Suwon-si, KR;
Woo-young Yang, Hwaseong-si, KR;
Chang-youl Moon, Suwon-si, KR;
Yong-young Park, Daejeon, KR;
Jeong-yub Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02595 (2013.01); H01L 29/45 (2013.01); H01L 29/458 (2013.01); H01L 29/66136 (2013.01); H01L 29/66757 (2013.01); H01L 29/66765 (2013.01); H01L 29/78675 (2013.01); H01L 29/78678 (2013.01); H01L 29/78684 (2013.01); H01L 29/868 (2013.01); H01L 29/04 (2013.01);
Abstract
A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.