The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Jan. 13, 2014
Applicants:

Eun-kyoung Kim, Hwaseong-Si, KR;

Myoung-won Yoon, Suwon-Si, KR;

Jong-chul Lee, Hwaseong-Si, KR;

Oh-suk Kwong, Seoul, KR;

Won-chul Lee, Yongin-Si, KR;

Inventors:

Eun-Kyoung Kim, Hwaseong-Si, KR;

Myoung-Won Yoon, Suwon-Si, KR;

Jong-Chul Lee, Hwaseong-Si, KR;

Oh-Suk Kwong, Seoul, KR;

Won-Chul Lee, Yongin-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/34 (2006.01); G11C 29/08 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01); G11C 29/08 (2013.01); G11C 29/50016 (2013.01);
Abstract

A method of storing data in a nonvolatile memory device comprises performing a program operation on target memory cells among multiple memory cells, performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state, and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom.


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