The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Apr. 04, 2013
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Yoshikazu Katoh, Osaka, JP;

Ryotaro Azuma, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5685 (2013.01); G11C 13/0007 (2013.01); G11C 13/0038 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 11/16 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/32 (2013.01); G11C 2213/72 (2013.01);
Abstract

A nonvolatile memory device including a control unit configured to read resistance value information for each of memory cells as initial resistance value information and store it temporarily before a voltage pulse for forming is applied, to set resistance value information as a threshold value serving as a target for completion of the forming, the resistance value information being obtained by multiplying the initial resistance value information by a predetermined coefficient, and to repeat application of the voltage pulse for forming and reading of the resistance value information until a resistance value indicated by the resistance value information on the memory cell becomes lower than a resistance value indicated by the threshold value.


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