The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jun. 30, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Chad A. Adams, Byron, MN (US);
Thinh V. Luong, Rochester, MN (US);
Jesse D. Smith, Rochester, MN (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 11/4074 (2006.01); G11C 8/00 (2006.01); G06F 1/26 (2006.01); G11C 8/04 (2006.01); G11C 11/4072 (2006.01); G11C 8/12 (2006.01); G06F 1/32 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 5/148 (2013.01); G11C 5/14 (2013.01); G06F 1/266 (2013.01); G06F 1/3203 (2013.01); G11C 5/063 (2013.01); G11C 8/04 (2013.01); G11C 8/12 (2013.01); G11C 11/4072 (2013.01); G11C 11/4074 (2013.01);
Abstract
A deep sleep wakeup signal is received at a first memory bank. A first gated memory array supply voltage is increased in response to the receiving the deep sleep wakeup signal at the first memory bank. The first memory array supply voltage is applied to a first memory array. The deep sleep wakeup signal is forwarded to a second memory bank in response to determining the first gated memory array supply voltage has reached a specified voltage.