The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Dec. 05, 2008
Applicants:

Paul Franklin Nealey, Madison, WI (US);

Huiman Kang, Madison, WI (US);

Francois Detcheverry, Madison, WI (US);

Juan J. DE Pablo, Madison, WI (US);

Ricardo Ruiz, San Bruno, CA (US);

Thomas Albrecht, San Jose, CA (US);

Inventors:

Paul Franklin Nealey, Madison, WI (US);

Huiman Kang, Madison, WI (US);

Francois Detcheverry, Madison, WI (US);

Juan J. De Pablo, Madison, WI (US);

Ricardo Ruiz, San Bruno, CA (US);

Thomas Albrecht, San Jose, CA (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11B 5/64 (2006.01); G11B 5/855 (2006.01); B81C 1/00 (2006.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); G03F 7/00 (2006.01); G11B 5/74 (2006.01); G11B 5/82 (2006.01);
U.S. Cl.
CPC ...
G11B 5/855 (2013.01); B81C 1/00031 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/0002 (2013.01); G11B 5/743 (2013.01); G11B 5/746 (2013.01); G11B 5/82 (2013.01); B81C 2201/0149 (2013.01);
Abstract

Methods to pattern substrates with dense periodic nanostructures that combine top-down lithographic tools and self-assembling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to self-assemble in the presence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also increased. High density and quality nanoimprint templates and other nanopatterned structures are also provided.


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