The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Dec. 04, 2012
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/134363 (2013.01); G02F 1/134336 (2013.01);
Abstract
In a horizontal electric field drive type liquid crystal electro-optic device, a gate electrode, a source electrode, a drain electrode, a semiconductor film and a common electrode are formed on a glass substrate and a liquid crystal material is driven by controlling the strength of an electric field substantially parallel to the glass substrate. The electrodes and the semiconductor film are made curved, for example semi-circular or semi-elliptical, in sectional profile. These curved sectional profiles can be formed by suitably selecting and combining various patterning and etching methods.