The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Jun. 09, 2014
Applicant:

Alexander Mikhailovich Shukh, San Jose, CA (US);

Inventor:

Alexander Mikhailovich Shukh, San Jose, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); G01R 33/09 (2006.01); G11B 5/39 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G11C 11/02 (2006.01);
U.S. Cl.
CPC ...
G01R 33/098 (2013.01); G11B 5/3909 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); G11B 5/3906 (2013.01); G11C 11/02 (2013.01); Y10T 428/1114 (2015.01); Y10T 428/1143 (2015.01);
Abstract

A method of fabricating a magnetoresistive element, the method comprising: forming a first plurality of layers without breaking a vacuum, the first plurality of layers sequentially comprising: a first nonmagnetic conductive layer; a first ferromagnetic layer comprising an amorphous structure and a first magnetization direction; a nonmagnetic tunnel barrier layer; a second ferromagnetic layer comprising an amorphous structure and a second magnetization direction, and a getter layer having a direct contact with the second ferromagnetic layer; annealing the first plurality of layers; removing the getter layer and a portion of the second ferromagnetic layer adjacent to the getter layer; forming above the second ferromagnetic layer a second plurality of layers such that interface between the second ferromagnetic layer and the second plurality of layers is formed without breaking a vacuum after removing the getter layer and the portion of the second ferromagnetic layer, the second plurality of layers sequentially comprising: a third magnetic layer comprising a third fixed magnetization direction directed substantially perpendicular to a substrate surface, and a second nonmagnetic conductive layer; wherein the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer crystallize during annealing into a coherent body-centered cubic (bcc) structure with (001) plane oriented, the first magnetization direction and the second magnetization direction are directed substantially perpendicular to the substrate surface, the second magnetization direction is fixed and is directed antiparallel to the third magnetization direction, and the first magnetization direction is reversible.


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