The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jun. 19, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Yann Astier, White Plains, NY (US);
Jingwei Bai, Los Angeles, CA (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Satyavolu S. Papa Rao, Poughkeepsie, NY (US);
Joshua T. Smith, Croton on Hudson, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 29/41 (2006.01); G01N 33/487 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); G01N 33/48721 (2013.01); H01L 29/413 (2013.01);
Abstract
A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nanogap.