The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2015

Filed:

Jan. 29, 2013
Applicant:

Dainippon Screen Mfg. Co., Ltd., Kyoto, JP;

Inventor:

Tatsufumi Kusuda, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/00 (2014.01); H01L 21/324 (2006.01); B23K 26/12 (2014.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
B23K 26/0066 (2013.01); B23K 26/0042 (2013.01); B23K 26/127 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01);
Abstract

The temperature of a semiconductor wafer is raised by light irradiation heating performed by halogen lamps. An infrared ray emitted from the semiconductor wafer whose temperature has been raised transmits through an infrared-transparent window made of silicon, and then is detected by an infrared camera. The infrared camera two-dimensionally detects the temperature of an entire surface of the semiconductor wafer. Based on a result of the detection obtained by the infrared camera, a temperature drop region having a relatively low temperature among the region of the semiconductor wafer is irradiated with laser light emitted from a laser light emission part. Accordingly, without rotating the semiconductor wafer, a temperature distribution can be made uniform with a high accuracy throughout the entire surface of the semiconductor wafer.


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