The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Mar. 21, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Terence B. Hook, Jericho, VT (US);

Christopher M. Schnabel, Wappingers Falls, NY (US);

Melanie J. Sherony, Fishkill, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. 2 LLC, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H03K 3/011 (2006.01); H01L 23/34 (2006.01); H01L 49/02 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H03K 3/011 (2013.01); H01L 21/76898 (2013.01); H01L 23/34 (2013.01); H01L 23/345 (2013.01); H01L 23/481 (2013.01); H01L 25/0657 (2013.01); H01L 28/20 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01);
Abstract

Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, and wherein the through-silicon via conducts heat from the thermal control circuitry to the region. In other embodiments, the method comprises forming a through-silicon via in a first semiconductor chip having thermal control circuitry. The method also comprises forming the through-silicon via in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, wherein the through-silicon via conducts heat from the thermal control circuitry to the region.


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