The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Jan. 10, 2013
Korea University Research and Business Foundation, Seoul, KR;
Tae geun Kim, Seongnam-si, KR;
Su-jin Kim, Seoul, KR;
Abstract
The present invention relates to a light-emitting device that is capable of preventing an increase in forward voltage while improving optical output characteristics, and to a method for manufacturing same. The light-emitting device comprises: a first conductive semiconductor layer; an active layer which is in contact with the first conductive semiconductor layer; a second conductive semiconductor layer which is in contact with the active layer and which has a patterned groove on a surface opposite the surface that is in contact with the active layer; a current-blocking layer which is formed on a bottom of the groove; a transparent conductive layer which is formed along a surface opposite the surface of the second conductive semiconductor layer that is in contact with the active layer, a sidewall of the groove, and the current-blocking layer; a reflective layer which is formed on a surface opposite the surface of the transparent conductive layer that is in contact with the second conductive semiconductor layer; a support substrate which is formed on a surface opposite the surface of the reflective layer that is in contact with the transparent conductive layer; and an electrode that is patterned on a surface opposite the surface of the first conductive semiconductor layer that is in contact with the active layer.