The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Dec. 27, 2010
Applicants:

Yong Tae Moon, Seoul, KR;

Jeong Sik Lee, Seoul, KR;

Joong Seo Park, Seoul, KR;

Ho Ki Kwon, Seoul, KR;

Seoung Hwan Park, Seoul, KR;

Inventors:

Yong Tae Moon, Seoul, KR;

Jeong Sik Lee, Seoul, KR;

Joong Seo Park, Seoul, KR;

Ho Ki Kwon, Seoul, KR;

Seoung Hwan Park, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); B82Y 20/00 (2011.01); H01L 33/38 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); B82Y 20/00 (2013.01); H01L 33/382 (2013.01); H01L 33/12 (2013.01);
Abstract

The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.


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