The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Aug. 09, 2013
Applicant:

Tsmc Solar Ltd., Taichung, TW;

Inventors:

Chung-Hsien Wu, Luzhu Township, TW;

Wen-Tsai Yen, Caotun Township, TW;

Jyh-Lih Wu, Tainan, TW;

Assignee:

TSMC Solar Ltd., Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0392 (2006.01); H01L 31/18 (2006.01); C23C 12/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); C23C 12/00 (2013.01); H01L 31/03923 (2013.01);
Abstract

A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities.


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