The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Sep. 05, 2014
Applicant:

AU Optronics Corporation, Hsin-Chu, TW;

Inventors:

Yen-Cheng Hu, Hsin-Chu, TW;

Jen-Chieh Chen, Hsin-Chu, TW;

Zhen-Cheng Wu, Hsin-Chu, TW;

Assignee:

AU OPTRONICS CORPORATION, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0236 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); H01L 31/02168 (2013.01); H01L 31/022441 (2013.01); H01L 31/186 (2013.01);
Abstract

A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate. The lead-containing conductive paste may pass through the back anti-reflection layer and connect to the n-type doped zones and the p-type doped zones thereby being regarded as n-type electrodes and p-type electrodes.


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