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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9178076 B1

PDFFull Text
Date of Patent:
Nov. 03, 2015

Filed:

Aug. 08, 2012

Thin-film transistor

Applicants:

Yuki Tsuruma, Sodegaura, JP;

Kazuaki Ebata, Sodegaura, JP;

Shigekazu Tomai, Sodegaura, JP;

Shigeo Matsuzaki, Sodegaura, JP;

Inventors:

Yuki Tsuruma, Sodegaura, JP;

Kazuaki Ebata, Sodegaura, JP;

Shigekazu Tomai, Sodegaura, JP;

Shigeo Matsuzaki, Sodegaura, JP;

Assignee:

IDEMITSU KOSAN CO., LTD., Tokyo, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/786 (2006.01); C23C 14/00 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); C23C 14/0057 (2013.01); C23C 14/086 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02581 (2013.01); H01L 21/02631 (2013.01); H01L 21/02667 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor () includes a source electrode (), a drain electrode (), a gate electrode (), a gate insulating film (), and a channel layer () that is formed of an oxide semiconductor, the channel layer () having an average carrier concentration of 1×10/cmto 5×10/cm, and including a high carrier concentration region () that is situated on the side of the gate insulating film () and has a carrier concentration higher than the average carrier concentration, and the channel layer () having a substantially homogenous composition.

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