The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Feb. 27, 2012
Takahiro Kawashima, Osaka, JP;
Hisao Nagai, Osaka, JP;
Eiichi Satoh, Hyogo, JP;
Yuji Kishida, Hyogo, JP;
Genshiro Kawachi, Chiba, JP;
Takahiro Kawashima, Osaka, JP;
Hisao Nagai, Osaka, JP;
Eiichi Satoh, Hyogo, JP;
Yuji Kishida, Hyogo, JP;
Genshiro Kawachi, Chiba, JP;
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD., Hyogo, JP;
JOLED INC., Tokyo, JP;
Abstract
A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.