The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Nov. 28, 2011
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Jae Woo Park, Seongnam, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong, KR;
Gun Hee Kim, Hwaseong, KR;
Aya Miki, Kobe, JP;
Shinya Morita, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Jae Woo Park, Seongnam, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong, KR;
Gun Hee Kim, Hwaseong, KR;
Kobe Steel, Ltd., Kobe-shi, JP;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.