The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Nov. 21, 2013
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Tsung-Hsiung Lee, Taoyuan, TW;
Jui-Chun Chang, Hsinchu, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A lateral double diffused metal-oxide-semiconductor device includes: a semiconductor substrate; an epitaxial semiconductor layer disposed over the semiconductor substrate; a gate structure disposed over the epitaxial semiconductor layer; a first doped region disposed in the epitaxial semiconductor layer at a first side of the gate structure; a second doped region disposed in the epitaxial semiconductor layer at a second side of the gate structure; a third doped region disposed in the first doped region; a fourth doped region disposed in the second doped region; a trench formed in the third doped region, the first doped region and the epitaxial semiconductor layer under the first doped region; a conductive contact formed in the trench; and a fifth doped region disposed in the epitaxial semiconductor layer under the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile