The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Sep. 13, 2012
Yasushi Higuchi, Okazaki, JP;
Shigemitsu Fukatsu, Okazaki, JP;
Masakiyo Sumitomo, Okazaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
In a semiconductor device, a trench gate has a bottom portion in a drift layer and a communication portion extending from a surface of a base layer to communicate with the bottom portion. A distance between adjacent bottom portions is smaller than a distance between adjacent communication portions in a x-direction. A region between adjacent trench gates is divided in a y-direction into an effective region as an electron injection source and an ineffective region which does not serve as the electron injection source. An interval L(>0) of the ineffective region in the y-direction, a length Dof the communication portion in the z-direction, and a length Dof the bottom portion in the z-direction satisfy L≦2(D+D). The z-direction is orthogonal to a x-y plane defined by the x-direction and the y-direction which are orthogonal to each other.