The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Nov. 18, 2014
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Jong Sik Shim, Seoul, KR;

Woo Jin Nam, Goyang-si, KR;

Hong Jae Shin, Seoul, KR;

Min Kyu Chang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 51/50 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 29/41733 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01); H01L 29/78648 (2013.01); H01L 51/50 (2013.01);
Abstract

Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.


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