The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
May. 27, 2014
Sung-min Kim, Incheon, KR;
Ji-su Kang, Seoul, KR;
Dong-kyu Lee, Hwaseong-si, KR;
Dong-ho Cha, Seongnam-si, KR;
Sung-Min Kim, Incheon, KR;
Ji-Su Kang, Seoul, KR;
Dong-Kyu Lee, Hwaseong-si, KR;
Dong-Ho Cha, Seongnam-si, KR;
Abstract
Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film.