The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Mar. 07, 2014
Atsushi Onogi, Toyota, JP;
Atsushi Onogi, Toyota, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A manufacturing method of a semiconductor device includes: a semiconductor substrate including a drain, a drift making contact with a front face of the drain, a body contacting with a front face of the drift, a source provided in part of a front face of the body, and a floating surrounded by the drift; and a gate including an insulator formed on an inner wall of a trench and a electrode disposed inside the insulator and which has a bottom portion contacting with the floating, the manufacturing method includes: forming the trench in a semiconductor wafer so as to have a bottom portion in which an end portion in a short direction perpendicular to a longitudinal direction thereof is deeper than a central portion; injecting an impurity ions into the bottom portion of the trench; and forming the central portion of the trench in the short direction to be deepened.