The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Mar. 04, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/36 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/7813 (2013.01);
Abstract
A silicon carbide semiconductor device includes a silicon carbide layer, a body region, a source region, a gate insulating film, a gate electrode, a source electrode, a first impurity region, and a second impurity region. The second impurity region is disposed within the silicon carbide layer so as to connect the body region and the first impurity region to each other, and has a second conductivity type. An impurity concentration in the second impurity region is equal to or higher than an impurity concentration in the silicon carbide layer and equal to or lower than a lower limit of an impurity concentration in the body region.