The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Sep. 03, 2013
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Jung-Woo Seo, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming semiconductor device includes forming a landing pad, forming a stopping insulating layer on the landing pad, forming a lower molding layer including a first material on the stopping insulating layer, forming an upper molding layer including a second material different from the first material on the lower molding layer, forming a hole vertically passing through the upper molding layer and the lower molding layer and exposing the landing pad, forming a first electrode in the hole, removing the upper molding layer to expose a part of a surface of the first electrode, removing the lower molding layer to expose another part of the surface of the first electrode, forming a capacitor dielectric layer on the exposed parts of the surface of the first electrode, and forming a second electrode on the dielectric layer.