The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Apr. 03, 2013
Seiko Instruments Inc., Chiba, JP;
Tomomitsu Risaki, Chiba, JP;
SEIKO INSTRUMENTS INC., , JP;
Abstract
A semiconductor device has a semiconductor substrate and a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate. A second conductivity type high concentration region is provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any low concentration region other than the first conductivity type low concentration region. A first conductivity type high concentration region is provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region.