The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Oct. 15, 2013
Rouying Zhan, Gilbert, AZ (US);
Chai Ean Gill, Chandler, AZ (US);
Changsoo Hong, Phoenix, AZ (US);
Michael H. Kaneshiro, Chandler, AZ (US);
Rouying Zhan, Gilbert, AZ (US);
Chai Ean Gill, Chandler, AZ (US);
Changsoo Hong, Phoenix, AZ (US);
Michael H. Kaneshiro, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An electrostatic discharge (ESD) protection device includes a semiconductor substrate comprising a buried insulator layer and a semiconductor layer over the buried insulator layer having a first conductivity type, and first and second bipolar transistor devices disposed in the semiconductor layer, laterally spaced from one another, and sharing a common collector region having a second conductivity type. The first and second bipolar transistor devices are configured in an asymmetrical arrangement in which the second bipolar transistor device includes a buried doped layer having the second conductivity type and extending along the buried insulator layer from the common collector region across a device area of the second bipolar transistor device.