The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Mar. 12, 2015
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
Muhammad Mujeeb-U-Rahman, Pasadena, CA (US);
Axel Scherer, Barnard, VT (US);
Assignee:
CALIFORNIA INSTITUTE OF TECHNOLOGY, Pasadena, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/283 (2006.01); H01L 23/00 (2006.01); H01L 21/285 (2006.01); H01L 29/41 (2006.01); H01L 33/38 (2010.01); H01L 31/00 (2006.01); H01L 21/02 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 21/28556 (2013.01); H01L 29/41 (2013.01); H01L 31/00 (2013.01); H01L 33/387 (2013.01); A61B 2562/125 (2013.01); B81C 1/0038 (2013.01); B81C 1/00111 (2013.01); H01L 21/02425 (2013.01); H01L 2224/1401 (2013.01); H01L 2924/11 (2013.01);
Abstract
Three dimensional high surface electrodes are described. The electrodes are fabricated by methods including the steps: designing the pillars; selecting a material for the formation of the pillars; patterning the material; transferring the pattern to form the pillars; insulating the pillars and providing a metal layer for increased conductivity. Alternative methods for fabrication of the electrodes and fabrication of the electrodes using CMOS are also described.