The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Dec. 18, 2013
Applicant:

Panasonic Corporation, Osaka, JP;

Inventor:

Kazuhiro Kaibara, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/485 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 23/482 (2006.01); H01L 29/417 (2006.01); H01L 23/532 (2006.01); H01L 29/812 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/4824 (2013.01); H01L 23/53238 (2013.01); H01L 24/07 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 29/0692 (2013.01); H01L 29/41725 (2013.01); H01L 29/812 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/37 (2013.01); H01L 24/45 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/04034 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/37124 (2013.01); H01L 2224/37144 (2013.01); H01L 2224/37147 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13064 (2013.01);
Abstract

A nitride semiconductor device includes first electrode interconnect layers and second electrode interconnect layers formed over a nitride semiconductor layer, a first insulating film formed on the first and second electrode interconnect layers and including first openings, first interconnect layers and second interconnect layers formed on the first insulating film and respectively connected to the first electrode interconnect layers and the second electrode interconnection layers through the first openings, a second insulating film formed on the first and second interconnect layers and including second openings, and a first pad layer and a second pad layer formed on the second insulating film and respectively connected to the first interconnect layers and the second interconnect layers through the second openings.


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