The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Jan. 08, 2009
Applicants:

Daisuke Oshida, Kanagawa, JP;

Toshiyuki Takewaki, Kanagawa, JP;

Shinji Yokogawa, Kanagawa, JP;

Inventors:

Daisuke Oshida, Kanagawa, JP;

Toshiyuki Takewaki, Kanagawa, JP;

Shinji Yokogawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/76807 (2013.01); H01L 21/76865 (2013.01); H01L 21/76873 (2013.01); H01L 21/76877 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 2221/1089 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device is provided, which includes a substrate, an insulator film formed over the substrate, and plural metal wirings with different widths containing copper as a main component and an impurity which is different from copper. The plural metal wirings includes a first metal wiring having a concentration profile where the concentration of the impurity metal increases from the center part of the stacking direction to the surface and the second metal wiring having a concentration profile where the concentration of the impurity metal decreases from the bottom surface of the stacking direction to the surface. Moreover, the width of the second metal wiring may be larger than the width of the first metal wiring.


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