The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Dec. 18, 2013
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Hirofumi Shinohara, Kanagawa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
Even when a semiconductor device having field effect transistors driven by relatively different power supply voltages provided over a semiconductor substrate is manufactured by the gate-last process, the breakdown voltage of the transistor on the higher voltage side can be ensured. When forming, over the substrate by the gate-last process, a MOSFET of a core region driven by a first power supply voltage and a MOSFET of a high-voltage region driven by a second power supply voltage higher than the first power supply voltage, the thickness of the hard mask film formed over a dummy gate film of the high-voltage region is made thicker than that of the hard mask film formed over a dummy gate film of the core region, prior to a process of patterning a dummy gate of the MOSFET of the core region and the MOSFET of the high-voltage region. Thereby, the breakdown voltage of MOSFET of the high-voltage region can be ensured.