The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Dec. 17, 2014
Advanced Semiconductor Manufacturing Corporation Limited, Shanghai, CN;
Xizheng Wang, Shanghai, CN;
Advanced Semiconductor Manufacturing Corporation Limited, Shanghai, CN;
Abstract
A method for yield improvement of trench MOS barrier Schottky (TMBS) devices includes: forming a plurality of trenches in a substrate; forming a gate dielectric layer over a surface of the substrate and inner surfaces of the trenches; forming gates in the trenches; forming a first barrier dielectric layer, a second barrier dielectric layer and an intermediate dielectric layer over the trenches; etching the intermediate dielectric layer with the second barrier dielectric layer serving as an etch stop layer to form a window for forming contact holes; etching a portion of the second barrier dielectric layer within the window using the first barrier dielectric layer as an etch stop layer; and etching in the window to remove a portion of the first barrier dielectric layer overlying the gates and a portion of the gate dielectric layer overlying the substrate.