The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Jul. 30, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 23/544 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/027 (2013.01); G03F 9/708 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01);
Abstract
A method of fabricating a semiconductor device includes forming an etch-target layer on a substrate having an alignment key, forming a transparent first pattern on the etch-target layer to face the alignment key, forming an opaque second pattern on the etch-target layer to be adjacent to the first pattern, and etching the etch-target layer using the first pattern and the second pattern as an etch mask.