The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Sep. 05, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Shyam Parthasarathy, Bangalore, IN;

Venkata Narayana Rao Vanukuru, Bangalore, IN;

Randy Lee Wolf, Essex Junction, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01F 5/00 (2006.01); H01F 17/00 (2006.01);
U.S. Cl.
CPC ...
H01F 17/0013 (2013.01); H01F 5/00 (2013.01); H01F 2017/0053 (2013.01); H01F 2017/0073 (2013.01);
Abstract

A multi-port inductor structure for use in semiconductor applications such as high-performance RF filters and amplifiers is provided. Embodiments of the present invention may provide 3 metallization layers and two via layers. The metallization layers and via layers may be substantially stacked on top of each other to conserve space. Each metallization layer comprises a ring pattern. In embodiments, the top two ring patterns include a plurality of concentric bands, forming a spiral pattern. The third (bottom) ring may include a broken ring pattern. In embodiments, the second (middle) ring may include one or more spans to facilitate connection to the inner bands of the second ring. The spans connect inner bands to an outer perimeter region of the second ring. Multiple tap points along the bands and spans allow multiple inductance values to be obtained from the structure.


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