The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Aug. 29, 2012
Applicants:
Tomoya Ogawa, Kawasaki, JP;
Takashi Ito, Kawasaki, JP;
Mitsuhiro Tomoeda, Yokohama, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 16/06 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/06 (2013.01); G11C 16/32 (2013.01);
Abstract
In a nonvolatile memory device () provided in a semiconductor device, when data is erased based on a band-to-band tunneling scheme, supply of a boosted voltage to a memory cell (MC) to be erased is ended when a condition that an output voltage (VUCP) of a charge pump circuit () has recovered to a predetermined reference voltage is satisfied and additionally a condition that a predetermined reference time has elapsed since start of supply of the boosted voltage (VUCP) to the memory cell (MC) to be erased is satisfied.